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Transistor base emitter collector widths
Transistor base emitter collector widths









238000000034 method Methods 0.000 title abstract description 29.Assignors: JANG, WEN-YUEH Application granted granted Critical Publication of US6177325B1 publication Critical patent/US6177325B1/en Anticipated expiration legal-status Critical Status Expired - Lifetime legal-status Critical Current Links ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.) Filing date Publication date Application filed by Winbond Electronics Corp filed Critical Winbond Electronics Corp Priority to US09/080,521 priority Critical patent/US6177325B1/en Assigned to WINBOND ELECTRONICS CORP. Original Assignee Winbond Electronics Corp Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.) Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.) Expired - Lifetime Application number US09/080,521 Inventor Wen-Yueh Jang Current Assignee (The listed assignees may be inaccurate.

TRANSISTOR BASE EMITTER COLLECTOR WIDTHS PDF

Google Patents Self-aligned emitter and base BJT process and structureĭownload PDF Info Publication number US6177325B1 US6177325B1 US09/080,521 US8052198A US6177325B1 US 6177325 B1 US6177325 B1 US 6177325B1 US 8052198 A US8052198 A US 8052198A US 6177325 B1 US6177325 B1 US 6177325B1 Authority US United States Prior art keywords layer polycide polysilicon emitter region Prior art date Legal status (The legal status is an assumption and is not a legal conclusion. Google Patents US6177325B1 - Self-aligned emitter and base BJT process and structure US6177325B1 - Self-aligned emitter and base BJT process and structure









Transistor base emitter collector widths